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· Resistivity of Si substrate: 1-10 Ω
Opto Electronic Devices
“Graphene Position Paper"
Our Reduced Graphene Oxide is subjected to a rigorous QC in order to ensure a high quality and reproducibility
Monolayer Graphene on Cu Choose Your Size:15 cm x 15 cm · Resistivity of Si substrate:Monolayer Graphene on Cu Processed in ISO 7 Cleanroom This product consist on a single layer graphene grown on copper foil substrate. Graphene Film Growth method: CVD synthesis Appearance (color): Transparent Transparency: > 97% Coverage: > 95% Number of graphene layers: 1 Thickness (theoretical): 0. 345 nm AFM Thickness (air @RT): <1nm Electron Mobility on SiO2 Si: 1500 cm2 Vs Sheet Resistance on SiO2 Si: 35040 Ohms sq (1cm x1cm) Grain size: Up to 20
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